1N1611A

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1N1611A Maximum Operating Temp (øC):150'
Test Freq:9.0G
Band:X
Minimum Figure of Merit:220
@Power Level (test) (W):1.0u
Semiconductor Material:Silicon
Military/High-Rel:N
Package Style:DO-22
Absolute Maximum Burnout (W):.25
Absolute Maximum Burnout (W):Û
Mounting Style:T
Video Imped. Min.:1.7k
Z(video) Max. (Ohms):3.1k
Tangent. Sens. (dBm):53
Frequency Min. (Hz):4.0G
Frequency Max. (Hz):10G
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• 1N1611A General Purpose UHF/MW Detector Diode

.../ 1N1611A / diodes inc


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Product Brand : American Microsemiconductor

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